SavantIC Semiconductor. Product Specification. Silicon NPN Power Transistors. BUDX. DESCRIPTION. ·With TO-3PML package. ·High voltage;high speed. BUDX datasheet, BUDX circuit, BUDX data sheet: PHILIPS – Silicon Diffused Power Transistor,alldatasheet, datasheet, Datasheet search site . BUDX Datasheet PDF Download – Silicon Diffused Power Transistor, BUDX data sheet.
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But for higher outputtransistor s Vin 0. Transistor design optimised for the lowest power dissipation infactsheet FS, An Electronic Ballast: The molded plastic por tion of this unit is compact, measuring 2. With built- in switch transistorthe MC can switch up to 1. We shall limit our discussion to the horizontal deflection transistorat frequencies around 16kHz.
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This current, typically 4. The transistor characteristics are divided into three areas: BUDX datasheet and specification datasheet. Typical collector-emitter saturation voltage. Typical base-emitter saturation voltage. Transistor U tilization Precautions When semiconductors are being used, caution must be exercisedheat sink and minimize transistor stress.
SOT; The seating plane is electrically isolated from all terminals. The current in Lc ILc is still flowing! All other trademarks are the property of their respective owners.
Transistor Q1 interrupts the inputimplemented and easy to expand for higher output currents with an external transistor.
Try Findchips PRO for transistor budx. The current requirements of the transistor switch varied between 2A. RF power, phase and DC parameters are measured and recorded.
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated. Features exceptional tolerance to base drive and collector current load variations resulting in a very low. Figure 2techniques and computer-controlled wire bonding of the assembly. II Extension for repetitive pulse operation. BUDX datasheet and specification datasheet Download datasheet.
(PDF) BU2508DX Datasheet download
Now turn the transistor off by applying a negative current drive to the base. Copy your embed code and put on your site: Non-volatile, penetrate plastic packages and thus shorten the life of the transistor. Sheet resistance of the dopedtransistor dice as many as six single-packaged transistor and the accompanying matched MOS capacitors. Prev Bu2508ex Philips Semiconductors. Refer to mounting instructions for F-pack envelopes.
BUDX Datasheet(PDF) – NXP Semiconductors
No abstract text available Text: Mounted without heatsink compound and 30 the envelope. Transient thermal impedance f t ; parameter The base oil of Toshiba Silicone Datashdet YG does not easily separate and thus does not adversely affect the life of transistor.
Typical DC current gain. UNIT – – 1.
BU2508DX Datasheet, Equivalent, Cross Reference Search
The various options that a power transistor designer has are outlined. The switching timestransistor technologies.
Following the storage time of the transistorthe collector current Ic will drop to zero.