isc website： 1 isc Silicon NPN Power Transistor. BUAX. DESCRIPTION. ·Collector-Emitter Sustaining Voltage VCEO(SUS)= V (Min ). BUAX BUAX; Silicon Diffused Power Transistor;; Package: SOT ( TOP-3D). Details, datasheet, quote on part number: BUAX. BUAX datasheet, BUAX circuit, BUAX data sheet: PHILIPS – Silicon Diffused Power Transistor,alldatasheet, datasheet, Datasheet search site for.
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Application information Where application information is given, it is advisory and does not form part of the specification. Test circuit for VCEOsust. Typical collector storage and fall time. Switching times test circuit. Switching times waveforms 32 kHz.
Switching times waveforms 16 kHz. Oscilloscope display for VCEOsust. September 1 Rev 2.
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SOT; The seating plane is electrically isolated from all terminals. September 2 Rev 2. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Product specification This data sheet contains final product specifications. Typical collector-emitter saturation voltage.
BUAX datasheet(1/8 Pages) PHILIPS | Silicon Diffused Power Transistor
How long will receive a response. Mounted with heatsink compound. Refer to mounting instructions for F-pack envelopes.
Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. September 7 Rev 2. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. Cfb -VBB t Fig. Typical DC current gain. September 6 Rev 2. New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.
Exposure to limiting values for extended periods may affect device reliability. September 3 Rev 2.
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September 8 Rev 2. Typical base-emitter saturation voltage. New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.
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Philips customers using or selling these products for use in such applications do so datasheet their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers.
UNIT – – 1. Forward bias safe operating area. Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.